dual igbt nx-series module 600 amperes/1700 volts CM600DXL-34SA 1 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery free-wheel diode isolat ed baseplate for easy heat sinking applications: a c motor control motion/ser vo control phot ovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM600DXL-34SA is a 1700v (v ces ), 600 ampere dual igbt power module. type current rating v ces amperes v olts (x 50) cm 600 34 outline drawing and circuit diagram di1 di2 tr 1 tr 2 es1 (18) g1 (17) th2 (16) th1 (15) th cs1 (14) es2 (13) g2 (12) cs2 (11) c1(1) c1(2) e2(3) e2(4) nc (5) nc (6) c2e1 (7) c2e1 (8) nc(10) nc(9) ntc a d e ax f ad au g j j k j g h detail ?a? detail ?c & d? detail ?c? detail ?d? detail ?a? aa (4 places) ab (6 places) detail ?b? detail ?b? ag x w z y u c aj ah ag ak af ac b l p s p r q m n g h ae t aq ap ak at an h al am as ar e b v p h h h 5 6 18 1 2 3 10 9 8 7 4 17 16 15 14 13 12 11 the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 tolerance otherwise specified (mm) m m ba az ba 45 h 9 bb av au aw ay 10 11 g di mensions inches millimeters a 5.98 1 52.0 b 4.79 1 21.7 c 0.81 20.5 d 5.39 1 37.0 e 4.330.02 1 10.00.5 f 0.53 1 3.5 g 0.810.012 20.50.3 h 0.15 3.81 j 0.6 1 5.24 k 0.740.012 1 9.050.3 l 0.75 1 9.24 m 0.3 7 .75 n 0.42 1 0.74 p 0.86 22.0 q 3.720.012 94.50.3 r 3.48 88.53 s 1.08 27 .53 t 1.62 41 .22 u 1.95 49.72 v 1.53 39.0 w 0.47 1 2.0 x 0.31 8.0 y 0.26 6.5 z 0.61 1 5.64 aa dia. 5.5 dia. dimensions inches millimeters ab m6 metric m6 ac 0.6 1 5.14 ad 0.14 3.6 ae 4.160.012 1 05.90.3 af 0.55 1 4.0 ag 0.27 7 .0 ah 0.14 3.5 aj 0.67+0.04/-0.02 1 7.0+1.0/-0.5 ak 0.12 3.0 al 0.04 1 .15 am 0.02 0.65 an 0.05 1 .2 ap 0.18 4.5 aq 0.5 1 2.5 ar 0.1 8 dia. 4.5 dia. a s 0.10 dia. 2.6 dia. a t 0.09 dia. 2.25 dia. au 0.450.012 1 1.360.3 av 0.360.012 9.1 50.3 aw 0.460.012 1 1.80.3 ax 4.180.012 1 06.30.3 ay 0.0170.012 0.450.3 az 0.51 1 3.0 ba 0.54 1 3.7 bb 0.530.012 1 1.350.3
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 2 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (dc, t c = 125c) *2,*4 i c 600 amper es collector current (pulse, repetitive) *3 i crm 1 200 amper es total power dissipation (t c = 25c) *2,*4 p tot 57 60 watts emitter current *2 i e *1 600 amper es emitter current (pulse, repetitive) *3 i erm *1 1 200 amper es isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 4000 v olts maximum junction temperature, instantaneous event (overload) t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature, continous operation (under switching) t j(op) -40 t o +150 c storage temperature t stg -40 t o +125 c *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction t emperature (t j(max) ) rating. *3 p ulse width and repetition rate should be such that device junction temperature (t j ) does not e xceed t j(max) rating. *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. 0 18.5 29.5 30.5 43.6 44.6 70.8 71.8 84.9 85.9 0 27.0 41.1 70.2 84.3 0 24.2 45.1 47.2 71.0 92.1 0 27.6 48.7 74.5 95.8 tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 tr 2 di2 tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 3 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *5 2.0 2.5 volts (t erminal) i c = 600a, v ge = 15v, t j = 125c *5 2.2 volts i c = 600a, v ge = 15v, t j = 150c *5 2.25 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *5 1.9 2.4 volts (chip) i c = 600a, v ge = 15v, t j = 125c *5 2.1 volts i c = 600a, v ge = 15v, t j = 150c *5 2.15 volts input capacitance c ies 158 nf output capacitance c oes v ce = 10v, v ge = 0v 13 nf reverse transfer capacitance c res 2.9 nf gate charge q g v cc = 1000v, i c = 600a, v ge = 15v 3310 nc turn-on delay time t d(on) 900 ns rise time t r v cc = 1000v, i c = 600a, v ge = 15v, 150 ns turn-off delay time t d(off) r g = 0?, inductive load 900 ns fall time t f 400 ns emitter-collector voltage v ec *1 i e = 600a, v ge = 0v, t j = 25c *5 4.1 5.3 volts (t erminal) i e = 600a, v ge = 0v, t j = 125c *5 2.9 volts i e = 600a, v ge = 0v, t j = 150c *5 2.7 volts emitter-collector voltage v ec *1 i e = 600a, v ge = 0v, t j = 25c *5 4.0 5.2 volts (chip) i e = 600a, v ge = 0v, t j = 125c *5 2.8 volts i e = 600a, v ge = 0v, t j = 150c *5 2.6 volts reverse recovery time t rr *1 v cc = 1000v, i e = 600a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 23 c turn-on switching energy per pulse e on v cc = 1000v, i c = i e = 600a, v ge = 15v 167 mj turn-off switching energy per pulse e off r g = 0?, t j = 150c 168 mj reverse recovery energy per pulse e rr *1 inductive load 106 mj internal lead resistance r cc' + ee' main terminals-chip, 0.6 m? p er switch,t c = 25c *4 internal gate resistance r g per switch 2.4 ? *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *5 p ulse width and repetition rate should be such as to cause negligible temperature rise. 0 18.5 29.5 30.5 43.6 44.6 70.8 71.8 84.9 85.9 0 27.0 41.1 70.2 84.3 0 24.2 45.1 47.2 71.0 92.1 0 27.6 48.7 74.5 95.8 tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 tr 2 di2 tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 4 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c, r 100 = 493? *4 -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case r th(j-c) q per inverter igbt *4 26 k/kw thermal resistance, junction to case r th(j-c) d per inverter fwdi *4 39 k/kw contact thermal resistance, r th(c-f) thermal grease applied, 7 k/kw case to heatsink per 1 module *4,*7 mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 22.5 mm terminal to baseplate 16.8 mm clearance d a terminal to terminal 15.5 mm terminal to baseplate 11.3 mm weight m 690 grams flatness of baseplate e c on centerline x, y *8 0 + 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across c1-e2 terminals 1 000 1200 volts gate-emitter drive voltage v ge(on) applied across 13.5 15.0 16.5 volts g1 -es1/g2-es2 terminals external gate resistance r g per switch 0 13 ? *4 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. r efer to the figure to the right for chip location. the heatsink ther mal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 t ypical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplat e (mounting side) flatness measurement points (x, y) are shown in the figure below. ? : concave + : convex ? : concave x y + : convex mounting side label side mounting side 0 18.5 29.5 30.5 43.6 44.6 70.8 71.8 84.9 85.9 0 27.0 41.1 70.2 84.3 0 24.2 45.1 47.2 71.0 92.1 0 27.6 48.7 74.5 95.8 tr1 / tr2: igbt, di1 / di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. di2 th tr 2 di2 tr 2 tr 2 di2 tr 2 di2 tr 2 di1 tr 1 di1 tr 1 di1 tr 1 di1 tr 1
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 5 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) 0 1 3 65 2 4 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 10 4 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 1412 16 18 20 8 6 4 2 0 collector-emitter voltage, v ce , (volts) output characteristics (typical) 0 2 4 6 8 10 0 1200 200 400 600 800 1000 collector current, i c , (amperes) 4.5 3.5 3.0 4.0 0 2.0 2.5 1.0 1.5 0.5 0 1200 600 800 1000 200 400 collector-emitter saturation voltage characteristics (typical) t j = 25c t j = 125c t j = 150c i c = 1200a i c = 600a i c = 360a v ge = 20v 10 11 8 9 15 t j = 25c t j = 25c (chip) t j = 25 c (chip) (chip) t j = 25c t j = 125c t j = 150c (chip)
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 6 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns) collector-emitter voltage, v ce , (volts) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 10 -1 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) 10 2 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) 10 3 external gate resistance, r g , (?) 10 3 0 5 10 10 2 10 1 switching time vs. gate resistance (typical) 15 v ge = 0v c ies c oes c res t d(off) t d(on) t r t f t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load t f t d(off) t d(on) t r v cc = 1000v v ge = 15v i c = 600a t j = 125c inductive load t f
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 7 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate charge, q g , (nc) gate charge vs. v ge (typical) 20 0 16 12 8 4 0 1000 5000 3000 4000 2000 emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 external gate resistance, r g , (?) 10 3 0 5 10 10 2 10 1 switching time vs. gate resistance (typical) 15 switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns) i c = 600a v cc = 1000v v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr t d(off) t d(on) t r v cc = 1000v v ge = 15v i c = 600a t j = 150c inductive load t f
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 8 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) switching energy, e on , e off , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) gate resistance, r g , (?) half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 1 10 2 10 3 half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 1 10 2 10 3 half-bridge switching characteristics (typical) gate resistance, r g , (?) 10 3 10 2 0 10 5 10 1 15 0 10 5 15 10 3 10 2 10 1 half-bridge switching characteristics (typical) reverse recovery energy, e rr , (mj) reverse recovery energy, e rr , (mj) 10 4 10 2 10 1 10 3 10 3 10 2 10 1 10 0 10 4 10 2 10 1 10 3 10 3 10 2 10 1 10 0 v cc = 1000v v ge = 15v i c = 600a t j = 150c inductive load v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load e on e off e rr e on e off e rr v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load e on e off e rr v cc = 1000v v ge = 15v i c = 600a t j = 125c inductive load e on e off e rr
CM600DXL-34SA dual igbt nx-series module 600 amperes/1700 volts 9 06/13 rev. 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') single pulse t c = 25c per unit base = r th(j-c) = 26 k/kw (igbt) r th(j-c) = 39 k/kw (fwdi) temperature, (c) temperature characteristics (ntc thermister part - typical) 10 2 10 1 10 0 10 -1 -50 0-25 25 50 75 125100 resistance, (k )
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